Rapid Thermal Annealing System
RTA series

High speed heat treatment from 2 inches to 300 mm 10 seconds until retention.
Infrared lamp heating is the method which can take advantage of its features of High energy density, Near infrared rays, High heat responsiveness, Temperature controllability, and Cold wall method.
We’re meeting the needs of our customers with supplying RTA Series, which can control the process recipe (heating and cooling) and gas type with its flow amount. The system is suitable for finding the best heating conditions.

Applications

Activation annealing after ion implantation.
Oxide film deposition annealing.
Ohmic electrode alloying.
Crystallization annealing of PZT, SBT and other ferroelectric thin films.
Si wafer donor-killer processing.
Silicide formation, salicide formation.
Heat treatment of light emitting elements, semiconductor laser substrates.
Ultra-shallow junction formation.
Ferroelectric capacitor deposition.
Gate oxide film formation.

Features

Capable of 200°C/s max. flash annealing.
Compatible with C to C robot transport systems.
Can be linked with semiconductor manufacturing equipment.
Zone output control of lamps to perform uniform heat treatment of multi-wafers.

Specifications

RTA-4000 CtoC

RTA-2000

RTA-6000

Model	Sample Size	Temperature Range	Max. Heating Rate	Atmosphere
RTA-2000	φ2-inch × 1 piece	RT ～ 1000°C	100 °C/sec	In Air, Vacuum, Static gas, Gas flow
RTA-4000	φ3 ～ 4-inch × 1 piece		200 °C/sec
RTA-6000	φ4 ～ 6-inch × 1 piece		200 °C/sec
RTA-8000	φ6 ～ 8-inch × 1 piece		200 °C/sec
RTA-12000	φ300mm × 1 piece		100 °C/sec

For other specification requirements, such as Single wafer processing, Flash annealing, C to C type, Other heating temperature, Gas type, Vacuum degree, please feel free to contact us.

C to C Robotic transfer system　During transfering Si wafer