A low-cost heating system consist of an Infrared Golc Image Furnace and quartz chamber including a sample holder.
Applications
- Alloying of compound semiconductors
- RTA of Si, compound semiconductors
- Baking furnace for laminating materials on ceramic substrates
- Annealing furnace for glass and ceramic substrates
Features
- Quartz chamber is selectable from gas flow type or vacuum type. (Gas flow type is standard.)
- Gas flow type and vacuum type can be integrated as option.
- Simple input of temperature recipe into computer connected with USB
- Display temperature data on the PC monitor during heating
Specifications
Model | SSA-E45P | SSA-E410P | SSA-P610CP |
---|---|---|---|
Heating Method | Focused light cylindrical heating | Focused light cylindrical heating | Parallel light cylindrical heating |
Temperature Range | RT ~ 1400 °C | RT ~ 1200 °C | |
Heating zone | φ15 × L50 (mm) | φ15 × L100 (mm) | φ50 × L100 (mm) |
Soaking zone | φ10 × L40 (mm) | φ10 × L80 (mm) | φ40 × L80 (mm) |
Heating chamber | Quartz chamber (φ30 mm) for gas flow |
Quartz chamber (φ98 mm) for gas flow |
|
Sample holder | Quartz holder with boat shape | Quartz holder with boat shape | Quartz holder for 2-inch wafer |
Thermocouple | JIS R-type | ||
Temperature controller | TPC5000-32-1 | TPC5000-62-1 |
*Heating temperature changes according to the heated sample’s infrared reflectance, absorption, heat capacity, and material.