Seebeck Coefficient / Electric Resistance Measurement System ZEM-3 series

Simultaneously measures the Seebeck coefficient and electric conductivity of thermoelectric materials.
Based on requests from both domestic and international academic societies and customers, this system features our easy to use, high-precision measurement techniques. Complies with JIS standards for thermoelectric material Seebeck coefficient measurement equipment.

Applications

Evaluate the thermoelectric properties of a wide variety of materials including semiconductors, ceramics, and metals

Features

  • A Infrared Gold Image Furnace with excellent temperature controllability and a micro-heater for temperature difference control
  • The measurements are controlled by a computer and enable to perform the measurements at specified temperatures on each emperature difference which eliminates dark electromotive force and allows automatic measurements
  • Ohmic contact automatic check function (V-I plot) as a standard function
  • Available to measure a thin film with an original adapter as an option.
  • Customizable to high resistance type

A patent and a standard

Thermoelectric power JIS R 1650-1
Resistivity JIS R 1650-2

Specifications

Model ZEM-3L ZEM-3LW ZEM-3M8 ZEM-3M10
Temperature Range -80 °C to 100 °C -100 °C to 200 °C RT, 50 °C to 800 °C RT, 50 °C to 1000 °C
Measurement Properties Seebeck coefficient, electric resistivity
Sample Size 2 to 4 mm square or φ x 5 to 22 mm length
Measurement Atomosphere Low-pressure He gas
Optional Cooling water circulator
Thermoelectric generation simulation software
Thin film attachment
Measurements in various atmospheres (negotialble)

Measurement principle

A prism or cylindrical sample is set in a vertical position between the upper and lower blocks in the heating furnace. While the sample is heated, and held, at a specified temperature, it is heated by the heater in the lower block to provide a temperature gradient. Seebeck coefficient is measured by measuring the upper and lower temperatures T1 and T2 with the thermocouples pressed against the side of the sample, followed by measurement of thermal electromotive force dE between the same wires on one side of the thermocouple. Electric resistance is measured by the dc four-terminal method, in which a constant current I is applied to both ends of the sample to measure and determine voltage drop dV between the same wires of the thermocouple by subtracting the thermo-electromotive force between leads.

Measurement Example of P Type Si80Ge20 Sintered Compact

Application

  • One-Minute Joule Annealing Enhances the Thermoelectric Properties of Carbon Nanotube Yarns via the Formation of Graphene at the Interface
    ACS Appl. Energy Mater. 2019, 2, 7700-7708
    10.1021/acsaem.9b01736
  • Fabrication by Coaxial-Type Vacuum Arc Evaporation Method and Characterization of Bismuth Telluride Thin Films
    M. UCHINO,1 K. KATO,2 H. HAGINO,1 and K. MIYAZAKI1,3
    Journal of ELECTRONIC MATERIALS, 2013 TMS
    10.1007/s11664-012-2438-2

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