2-Omega Method Nano Thin Film Thermal Conductivity Meter
TCN-2ω

Thermal conductivity evaluation for a nano thin film at normal direction
TCN-2ω is the world’s only system which can measure thermal conductivity for a nano thin film at normal direction.

Applications

Best suited for evaluation of thermal conductivity of thin film required for thermal design.
Low-K insulating film, Organic thin film, Thin film of thermoelectric materials
Development on an insulating film and improvement of its heat dissipation
Application evaluation to thermoelectric thin films

Features

Available to measure thermal conductivity of thin film (20 ～ 1000nm thickness) deposited on a substrate
Actualize the measurement of detecting temperature change by thermo-reflectance method
Simply pre-treated for a sample

Specifications

Measurement Properties	RT
Sample size	W10 × L10 ～ 20 × t0.3 ～ 1 (mm) (Substrate)
Measurement Atomosphere	Vacuum

Measurement principle

Metal thin film is heated by the periodic heating method with the basic frequency ( f / Hz). As a result, the response frequency with the thermal energy, 2 f / Hz, is equal to two times as large as the basic one. In the case of the film composed of metal thin film (0) – thin film (1) – substrate (s) as shown in Figure, the temperature increase T(0) on the upper surface for the metal thin film can be calculated on the basis of one-dimensional heat conduction model. Assuming that the energy completely arrived at the bottom substrate, T(0) is following the equation,

（λ / W m^-1 K^-1, C / J K^-1 m^-3, q/ W m^-3, d / m , ω (=2πf ) / s^-1）

We note that the real part (in-phase amplitude) contains the information for the thin film. Assuming that the thermal energy completely arrives at the bottom substrate, the in-phase amplitude is proportional to (2ω)^-0.5. Thermal conductivity for the thin film (λ₁) is estimated from
(m:slope, n: intercept）

Experimental result for various SiO2 thin films measured by TCN-2ω — Experimental result for various SiO₂ thin films measured by TCN-2ω

SiO₂film （20-100nm）- Si substrate

d₁ / nm	19.9	51.0	96.8
λ₁ / Wm^-1 K^-1	0.82	1.12	1.20

A patent and a standard

Measurement method of thermophysical properties（Japan Patent　No.5426115）

論文リスト

Thermal conductivity of thin substrate materials evaluated by 2ω method under adiabatic boundary condition

Analysis service by using this product